SI7625DN-T1-GE3
SI7625DN-T1-GE3
ПроизводительVishay Intertech
Партномер производителяSI7625DN-T1-GE3
Количество на складе0 шт (1 склад)
ОписаниеTransistors/Thyristors Vishay Intertech SI7625DN-T1-GE3
DatasheetDatasheet
0 шт.
Ti-StoreХарактеристики
| Параметр | Значение |
|---|---|
| Категория | МОП-транзисторы |
| Производитель | Vishay Intertech |
| Вес | 0.077 |
| Operating Temperature | -55℃~+150℃ |
| Type | P-Channel |
| Continuous Drain Current (Id) | 35A |
| Input Capacitance (Ciss@Vds) | 4.427nF@15V |
| Drain Source Voltage (Vdss) | 30V |
| Power Dissipation (Pd) | 3.7W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 430pF@15V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.007Ω@10V,35A |
| Total Gate Charge (Qg@Vgs) | 39.5nC@10V |
| Pd- Power Dissipation | 3.7W |
| RDS(on) | 7mΩ@10V,35A |
| Drain to Source Voltage | 30V |
| Number | 1 P-Channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 35A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Input Capacitance(Ciss) | 4.427nF@15V |
| Gate Charge(Qg) | 39.5nC@10V |